 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DISCRETE SEMICONDUCTORS DATA SHEET page M3D087 PBYR2150CT Schottky barrier double diode Preliminary specification 1996 Oct 14 Philips Semiconductors Preliminary specification Schottky barrier double diode FEATURES * Low switching losses * Low forward voltage * High breakdown voltage * Fast recovery time * Guard ring protected * Plastic SMD package. APPLICATIONS * Low power, switched-mode power supplies * Rectification * Polarity protection. 1 2 3 1 PBYR2150CT DESCRIPTION The PBYR2150CT is a Schottky barrier double diode, fabricated in planar technology, and encapsulated in a SOT223 plastic SMD package. 4 4 3 2 PINNING PIN 1 2 3 4 DESCRIPTION anode (a1) common cathode anode (a2) common cathode Top view MAM086 Marking code: BYR215. Fig.1 Simplified outline (SOT223), pin configuration and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR VRRM VRWM IF(AV) IFSM continuous reverse voltage repetitive peak reverse voltage crest working reverse voltage average forward current Tamb = 85 C; Rth j-a = 70 K/W; note 1; VR(equiv) = 0.2 V; note 2 - - - - - 150 150 150 1 10 V V V A A PARAMETER CONDITIONS MIN. MAX. UNIT non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC method 1996 Oct 14 2 Philips Semiconductors Preliminary specification Schottky barrier double diode PBYR2150CT SYMBOL Per diode Tstg Tj Tamb Notes PARAMETER CONDITIONS MIN. MAX. UNIT C C C storage temperature junction temperature operating ambient temperature -65 -65 - +150 +150 80 1. Refer to SOT223 standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.2 IF = 0.1 A; note 1 IF = 0.5 A; note 1 IF = 1 A; note 1 IF = 1 A; Tj = 100 C; note 1 IR reverse current VR = VRRMmax; note 1; see Fig.3 VR = VRRMmax; Tj = 100 C; note 1; see Fig.3 Cd Note 1. Pulsed test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT223 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 70 UNIT K/W diode capacitance VR = 4 V; f = 1 MHz; see Fig.4 400 650 850 690 1 10 100 mV mV mV mV mA mA pF PARAMETER CONDITIONS MAX. UNIT 1996 Oct 14 3 Philips Semiconductors Preliminary specification Schottky barrier double diode GRAPHICAL DATA MGD766 PBYR2150CT handbook, halfpage I 10 1 F (A) 10-2 handbook, halfpage IR (A) 10-3 (4) (3) MGD767 10-1 10-2 10-3 10-4 10-5 10-6 (4) (3) (2) (1) 10-4 (2) 10-5 (1) 10-6 0 0.2 0.4 0.6 VF (V) 0.8 (1) (2) (3) (4) 0 50 100 VR (V) 150 (1) (2) (3) (4) Tamb = 25 C. Tamb = 60 C. Tamb = 80 C. Tamb = 100 C. Tamb = 25 C. Tamb = 60 C. Tamb = 80 C. Tamb = 100 C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 250 Cd (pF) MGD768 200 150 100 50 0 0 50 VR (V) 100 f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 Oct 14 4 Philips Semiconductors Preliminary specification Schottky barrier double diode PACKAGE OUTLINE PBYR2150CT handbook, full pagewidth 0.95 0.85 S 0.32 0.24 seating plane 6.7 6.3 3.1 2.9 0.1 S B 4 0.2 M A A 0.10 0.01 3.7 3.3 o 7.3 6.7 16 o max 16 1 1.80 max 10 max o 2 2.3 4.6 0.80 0.60 3 0.1 M B (4x) MSA035 - 1 Dimensions in mm. Fig.5 SOT223. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 14 5 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. |
Price & Availability of PBYR2150CT
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |